The proceedings of the workshop are available through Open Proceedings at this link : http://ceur-ws.org/Vol-1566
The workshop program can be downloaded : ERMAVSS_Program.
Invited Talks
Reliability and Safety Challenges of Automotive Devices
Summary Recent years, to enhance automotive functionalities for more driving enjoyment and hazard prevention, more and more electronic devices are used to monitor and control automotive operation. To ensure the safety of drivers and passengers, these electronic devices need higher reliability. In this talk, we will present what Mentor Graphics are doing to prepare for these reliability and safety challenges in pre-silicon, post-silicon and system operations. About the Speaker Wu-Tung Cheng is a Chief Scientist and Advanced Test Research Director in Mentor Graphics. He is an IEEE fellow since year 2000. He has over 150 publications and 50 patents in semiconductor manufacture test and diagnosis area. In 2006, ...
The Resilience Wall: Cross-Layer Solutions
Summary Resilience to hardware failures is essential for a large class of future computing systems that are constrained by the so-called power wall: from embedded systems to supercomputers. To overcome this major challenge, we advocate and examine a cross-layer resilience approach. Two major components of this approach are: 1. System- and software-level effects of circuit-level faults are considered from early stages of system design; and, 2. resilience techniques are implemented across multiple layers of the system stack – from circuit and architecture levels to runtime and applications – such that they work together to achieve required degrees of resilience in a ...
Aging on RT Level – Analysis and Monitoring
Traditionally, aging of ICs was investigated by reliability departments and resulted in an overall guardband factor which needed to be considered during IC design. This approach is increasingly less appropriate. Transistor-level aging models, however, are not suitable for analyzing large circuits. Therefore, gate level timing models incorporating aging have been developed. We will show aging information can be abstracted further from gate to RT level – without loss of accuracy. We will also discuss how such RT level timing models can be employed to monitor the aging of digital circuits during their operation. About the Speaker Ulf Schlichtmann spent about 10 years ...
Reliability and Variability in CMOS Devices
As FET devices scale toward ~10 nm gate lengths, the discreteness of matter and the particular arrangement of individual atoms in each device result in increased time-zero variability. Moreover, degradation mechanisms, such as TDDB and BTI, can be traced to as-fabricated and generated defects in the gate oxide. Since literally only a handful of defects will be present in each deeply scaled device, while the behavior of these defects is typically stochastic, voltage and temperature dependent, and widely distributed in time, each device will be behaving differently during operation, resulting in additional, time-dependent variability. We will argue that reliability and ...